Abstract
Low-power microwave systems with minimal losses are required due to the growing demand for more efficient communication systems. Two-dimensional semiconductors can potentially be used to create low-power microwave circuits, but the development of integrated two-dimensional microwave systems remains limited. Here we report integrated two-dimensional transmitters fabricated on four-inch monolayer molybdenum disulfide (MoS2) wafers. The transmission loss of monolayer MoS2 channel in switch is 0.51 dB, and the power consumption of the complete 16-element transmitter is 3.2 μW. The 4 × 4 phased array transmitter, which offers both communication and radar functions, exhibits a bandwidth of 6 GHz, a beam scanning angle from −35° to 35°, a transmission distance of 136 m and a standby time of 26 days when powered by a 1,000 mAh-capacity battery. Our complete board-level system has a size of around 3 × 2 cm2, and we show that it can be integrated into a small insect model.
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Source data are provided with this paper. Additional data related to this work are available from the corresponding authors upon reasonable request.
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References
Kim, Y. et al. Chip-less wireless electronic skins by remote epitaxial freestanding compound semiconductors. Science 377, 859–869 (2022).
Li, W. et al. Intelligent metasurface system for automatic tracking of moving targets and wireless communications based on computer vision. Nat. Commun. 14, 989 (2023).
Xia, Y. et al. 12-inch growth of uniform MoS2 monolayer for integrated circuit manufacture. Nat. Mater. 22, 1324–1331 (2023).
Wang, S. Y. et al. Two-dimensional devices and integration towards the silicon lines. Nat. Mater. 21, 1225–1239 (2022).
Li, N. et al. Large-scale flexible and transparent electronics based on monolayer molybdenum disulfide field-effect transistors. Nat. Electron. 3, 711–717 (2020).
Gao, Q. G. et al. Scalable high performance radio frequency electronics based on large domain bilayer MoS2. Nat. Commun. 9, 4778 (2018).
Kim, M. et al. Zero-static power radio-frequency switches based on MoS2 atomristors. Nat. Commun. 9, 2524 (2018).
Kim, Y. S. et al. Monolayer molybdenum disulfide switches for 6G communication systems. Nat. Electron. 5, 367–373 (2022).
Zhang, X. et al. Two-dimensional MoS2-enabled flexible rectenna for Wi-Fi-band wireless energy harvesting. Nature 566, 368–372 (2019).
Lin, Y. M. et al. Wafer-scale graphene integrated circuit. Science 332, 1294–1297 (2011).
Wang, Y. et al. A 39-GHz 64-element phased-array transceiver with built-in phase and amplitude calibrations for large-array 5G NR in 65-nm CMOS. IEEE J. Solid-State Circuits 55, 1249–1269 (2020).
Lin, Y. H. et al. A 24-GHz 65-nm CMOS 3-D radial and vertically stacked transmitter front-end IC for vital-sign detection radar applications. In 2022 Asia-Pacific Microwave Conference (APMC) 2022 282–284 (IEEE, 2022).
Méndez-Rial, R. et al. Hybrid MIMO architectures for millimeter wave communications: phase shifters or switches? IEEE Access 4, 247–267 (2016).
Masotti, D. et al. Time-modulation of linear arrays for real-time reconfigurable wireless power transmission. IEEE Trans. Microw. Theory Techn. 64, 331–342 (2016).
Cheng, D. K. Field and Wave Electromagnetics (Addison-Wesley, 1983).
Maxwell, J. C. A dynamical theory of the electromagnetic field. Philos. Trans. R. Soc. Lond. 155, 459 (1865).
Wu, C. et al. A phased array based on large-area electronics that operates at gigahertz frequency. Nat. Electron. 4, 757–766 (2021).
Koch, U. et al. A monolithic bipolar CMOS electronic-plasmonic high-speed transmitter. Nat. Electron. 3, 338–345 (2020).
Li, W. Y. et al. Monolayer black phosphorus and germanium arsenide transistors via van der Waals channel thinning. Nat. Electron. 7, 131–137 (2024).
Li, T. T. et al. Epitaxial growth of wafer-scale molybdenum disulfide semiconductor single crystals on sapphire. Nat. Nanotechnol. 16, 1201–1207 (2021).
Jornet, J. M. et al. Wireless communications sensing and security above 100 GHz. Nat. Commun. 14, 841 (2023).
Elgaard, C. et al. Efficient wideband mmW transceiver front end for 5G base stations in 22-nm FD-SOI CMOS. IEEE J. Solid-State Circuits 59, 321–336 (2024).
Di, M. F. et al. A study of ESD-mmwave-switch co-design of 28GHz distributed travelling wave switch in 22nm FDSOI for 5G systems. IEEE J. Electron Devices 9, 1290–1296 (2021).
Erturk, V. et al. A high-power and broadband GaN SPDT MMIC switch using gate-optimized HEMTs. IEEE Microw. Wireless Technol. Lett. 33, 1207–1210 (2023).
Hangai, M. et al. 2-12 GHz high-power GaN MMIC switch utilizing stacked-FET circuits. In 2019 14th European Microwave Integrated Circuits Conference (EuMIC) 286–289 (IEEE, 2019).
Lu, D. et al. Highly selective bandpass switch block with applications of MMIC SPDT switch and switched filter bank. IEEE J. Solid-State Circuits Lett. 5, 190–193 (2022).
Wu, T. X. et al. A sub-6G SP32T single-chip switch with nanosecond switching speed for 5G applications in 0.25 μm GaAs technology. Electronics 10, 1482 (2021).
Suh, B. et al. A 28-GHz reconfigurable SP4T switch network for a switched beam system in 65-nm CMOS. IEEE Trans. Microw. Theory Techn. 68, 2057–2064 (2020).
Tsai, Z. Y. et al. Manufacturing and testing of radio frequency MEMS switches using the complementary metal oxide semiconductor process. Sensors 21, 1396 (2021).
Manente, D. et al. A 22-31 GHz bidirectional 5G transceiver front-end in 28 nm CMOS. In IEEE 47th European Solid State Circuits Conference (SSCIRC) 283–286 (IEEE, 2021).
Sanjari, P. et al. An integrated photonic-assisted phased array transmitter for direct fiber to mm-wave links. Nat. Commun. 14, 1414 (2023).
Park, H. C. et al. 4.1 A 39GHz-band CMOS 16-channel phased-array transceiver IC with a companion dual-stream IF transceiver IC for 5G NR base-station applications. In 2020 IEEE International Solid-State Circuits Conference (ISSCC) 76–78 (IEEE, 2020).
Lu, X. Y. et al. 4.6 Space-time modulated 71-to-76GHz mm-wave transmitter array for physically secure directional wireless links. In 2020 IEEE International Solid-State Circuits Conference (ISSCC) 86–88 (IEEE, 2020).
Sen, P. et al. Multi-kilometre and multi-gigabit-per-second sub-terahertz communications for wireless backhaul applications. Nat. Electron. 6, 164–175 (2023).
Ball, E. A. et al. A mmwave transmitting time modulated array using bespoke GaAs integrated circuits—prototype design and laboratory trials at 73 GHz. IEEE Open J. Antennas Propag. 6, 144–162 (2025).
Moradi, A. et al. An energy-efficient high data-rate 915 MHz FSK wireless transmitter for medical applications. Analog Integr. Circ. Sig. Process. 83, 85–94 (2015).
Pashaeifar, M. et al. A millimeter-wave mutual-coupling-resilient double-quadrature transmitter for 5G applications. IEEE J. Solid-State Circuits 56, 3784–3798 (2021).
Fan, D. X. et al. Two-dimensional semiconductor integrated circuits operating at gigahertz frequencies. Nat. Electron. 6, 879–887 (2023).
Sanne, A. et al. Embedded gate CVD MoS2 microwave FETs. npj 2D Mater. Appl. 1, 26 (2017).
Polyushkin, D. K. et al. Analogue two-dimensional semiconductor electronics. Nat. Electron. 3, 486–491 (2020).
Kim, M. et al. Analogue switches made from boron nitride monolayers for application in 5G and terahertz communication systems. Nat. Electron. 3, 479–485 (2020).
Montanaro, A. et al. Sub-THz wireless transmission based on graphene-integrated optoelectronic mixer. Nat. Commun. 14, 6471 (2023).
Wu, Y. Q. et al. High-frequency, scaled graphene transistors on diamond-like carbon. Nature 472, 74–78 (2011).
Wang, Z. J. et al. A linearity-enhanced 18.7-36.5-GHz LNA with 1.5-2.1-dB NF for radar applications. IEEE Microw. Wireless Compon. Lett. 32, 972–975 (2022).
Pour, F. L. et al. Design and performance investigation of a temperature compensated transmitter with GaN HEMTs for phased-array applications. IEEE Trans. Microw. Theory Techn. 70, 3640–3651 (2022).
Liu, R. J. et al. A 24-28-GHz GaN MMIC synchronous doherty power amplifier with enhanced load modulation for 5G mm-wave applications. IEEE Trans. Microw. Theory Techn. 70, 3910–3922 (2022).
Huang, Y. S. et al. A 1T2R heterogeneously integrated phased-array FMCW radar transceiver with AMC-based antenna in package in the W-band. IEEE Trans. Microw. Theory Techn. 72, 3772–3787 (2023).
Venkatesh, S. et al. Secure space-time-modulated millimetre-wave wireless links that are resilient to distributed eavesdropper attacks. Nat. Electron. 4, 827–836 (2021).
Fang, Z. Y. et al. A silicon-based radio platform for integrated edge sensing and communication toward sustainable healthcare. IEEE Trans. Microw. Theory Techn. 71, 1296–1311 (2023).
Park, J. H. et al. A 94-GHz high resolution radar using time interleaving active array in 65-nm CMOS. IEEE Access 11, 141473–141484 (2023).
Eltaliawy, A. et al. A broadband, mm-wave SPST switch with minimum 50-dB isolation in 45-nm SOI-CMOS. IEEE Trans. Microw. Theory Techn. 69, 2899–2906 (2021).
Su, Y. P. et al. A 24-GHz fully integrated CMOS transceiver for FMCW radar applications. IEEE J. Solid-State Circuits 56, 3307–3317 (2021).
Cheon, C. D. et al. A new wideband, low insertion loss, high linearity SiGe RF switch. IEEE Microw. Wireless Compon. Lett. 30, 985–988 (2020).
Lee, S. et al. An E-band CMOS direct conversion IQ transmitter for radar and communication applications. In 2022 IEEE Radio Frequency Integrated Circuits Symposium (RFIC) 111–114 (IEEE, 2022).
Acknowledgements
This work was equally supported by the National Key Research and Development Program of China under grant number 2021YFA1200500, National Natural Science Foundation of China under grant numbers 62304042, 62525401, 62334011 and 62104039, and the New Cornerstone Science Foundation through the XPLORER PRIZE.
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Conceptualization: P.Z., S.M. and W.B. Methodology: P.Z., S.M. and L.Z. Investigation: S.M., T.W., X.D., H.Q., Z.X., T.Y., X.L., J.Z., H.Y., Z.W. and L.Z. Visualization: L.Z., T.W. and X.D. Funding acquisition: P.Z., S.M. and W.B. Supervision: P.Z., S.M. and W.B. Writing—original draft: L.Z., T.W. and X.D. Writing—review and editing: T.W., L.Z., X.D., H.Q., Z.X., T.Y., X.L., J.Z., H.Y., Z.W., W.B., S.M. and P.Z.
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Wu, T., Zhu, L., Dong, X. et al. Integrated two-dimensional microwave transmitters fabricated on the wafer scale. Nat Electron (2025). https://doi.org/10.1038/s41928-025-01452-9
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DOI: https://doi.org/10.1038/s41928-025-01452-9