Fig. 2: Electrical characterization of FeCAP and memristor arrays.
From: A ferroelectric–memristor memory for both training and inference
a, High-resolution transmission electron microscopy cross-section showing 10-nm Si:HfO2 film crystallization. b, Raw distributions of zero and one states in a 16-kilo-device FeCAP array (based on 1T–1C cells) (3 V–2 µs reading and programming pulses). c, Polarization-switching energy as a function of pulse duration and amplitude. d, Median memory window as a function of cycling, for programming conditions A and B defined in b. e, Raw distributions of zero and one states in 16-kilo-device FeCAP arrays, measured after 107 endurance cycles, for programming conditions A and B. f, Average memristor conductance and standard deviation at 1σ with increasing programming currents. g, Experimental conductance distributions with eight levels programmed per cell. h, High-conductance state (HCS) and low-conductance state (LCS) distributions measured for the of 16-kilo-device memristor array after several SET–RESET cycling phases.
