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A terahertz nonlinear diode chain based on an asymmetric double-layer topology

Nature Electronics (2025)Cite this article

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Abstract

Frequency multiplier devices based on Schottky barrier diodes can be used to generate terahertz radiation, offering high power output and potential integration into all-solid-state systems. However, the scaling of the output power of such devices is often limited by the power handling capacity of a single diode. A connected chain of Schottky barrier diodes, together with a power combining approach, can be used to increase the terahertz output power. However, the uneven field distribution among the diodes—which is related to the similarity between the terahertz wavelength and the physical dimensions of the diodes themselves—leads to lower efficiency and premature breakdown. Here we report an asymmetric double-layer C-shaped diode chain structure that can adjust the local electromagnetic field distribution and enhance the conversion efficiency of the diode chain. Our resulting device has a frequency doubling efficiency of 38%, with an output exceeding 300 mW at 170 GHz.

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Fig. 1: MAC architecture and its NFC functionality with metamaterial characteristics.
Fig. 2: Electronic properties and electric field distributions of the microstructure diode chain.
Fig. 3: Field coupling modulation of the double-layer chip in the near field.
Fig. 4: Channel conversion efficiency optimization simulation of the double-layer chip.
Fig. 5: Experimental characterization of the double-layer MAC chip device.
Fig. 6: Benchmarking of single-channel frequency multipliers.

Data availability

Source data are provided with this paper. Other data that support the findings of this study are available from the corresponding authors upon reasonable request.

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Acknowledgements

This work was supported by the National Key Research and Development Program of China (2023YFB3207800) and the National Natural Science Foundation of China (62131007, 62401116, U24A20298, U24A20227, 62331015 and 62305051).

Author information

Author notes

  1. These authors contributed equally: Hongji Zhou, Tianchi Zhou, Yaxin Zhang.

Authors and Affiliations

  1. University of Electronic Science and Technology, Chengdu, China

    Hongji Zhou, Tianchi Zhou, Yaxin Zhang, Hongxin Zeng, Jun Zhou, Huajie Liang, Lin Huang, Sen Gong, Yazhou Dong, Jingrui Liang, Hailong Guo & Ziqiang Yang

  2. School of Microelectronics, Tianjin University, Tianjin, China

    Shixiong Liang

  3. China Electronics Technology Group Corporation 13th Research Institute, Shijiazhuang, China

    Zhihong Feng

  4. School of Engineering, Brown University, Providence, RI, USA

    Daniel M. Mittleman

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Contributions

H. Zhou, T.Z. and Y.Z. conceived the idea of the asymmetric double-layer C-shaped diode chain. S.L. was responsible for the chip fabrication, device assembly and experimental setup. J.Z. and Y.D. assisted with the simulations. J.L. and H.G. performed the experimental measurements. H. Zeng and H.L. carried out the data analysis and contributed to drafting the manuscript. L.H. and S.G. participated in discussions regarding potential testing and measurement configurations. Z.F. and Z.Y. supported the design and optimization of the chip and metal cavity. D.M.M. made contributions to the theoretical analysis and refining the manuscript.

Corresponding authors

Correspondence to Yaxin Zhang, Hongxin Zeng, Shixiong Liang or Daniel M. Mittleman.

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The authors declare no competing interests.

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Nature Electronics thanks Safumi Suzuki and the other, anonymous, reviewer(s) for their contribution to the peer review of this work.

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Extended data

Extended Data Table 1 Comparison of THz frequency multipliers devices
Full size table

Extended Data Fig. 1 Mode Isolation and Harmonic Suppression in Balanced THz Frequency Multiplier.

Schematic diagram illustrating the operating principle of a balanced frequency doubler based on an artificial microstructure Schottky diode series chain.

Extended Data Fig. 2 The Principle of Transition in Periodic Structures.

a, Equivalent circuit and material composition of a single Schottky diode. b, Equivalent circuit of a conventional linear diode chain. c, Architecture of the Schottky diode chain, consisting of horizontal and vertical sections. d, Equivalent circuit of a C-shaped diode chain formed by introducing phase delay transmission lines. e, Influence of the number of periodic diode units on end-to-end transmission loss. f, Influence of the number of phase delay units on end-to-end transmission loss.

Source data

Extended Data Fig. 3 The Effect of Expanding the Periodic Structure on the Performance Metrics.

a, Expanding the number of periodic diodes in the microstructured diode chain, the maximum efficiency value remains unchanged. b, Expanding the number of diodes in the conventional linear arrangement, the maximum efficiency value decreases. c, Expanding the number of periodic diodes in the microstructured diode chain, with a better input matching capability. d, Implications of realizing a multi-anode frequency doubler: with an increase in the number of anodes, the output power increases!Note: N represents the number of diodes on a single chip layer.

Source data

Extended Data Fig. 4 Influence of Three-Dimensional Field Coupling on Transmission Characteristics.

a, Effect of inter-substrate spacing in the double-layer MAC structure on input coupling efficiency. b, Effect of inter-substrate spacing in the double-layer MSC structure on input coupling efficiency. c, Effect of the total number of diodes in the double-layer MAC structure on input coupling efficiency, where N denotes the sum of diodes in both layers. d, Effect of the total number of diodes in the double-layer MAC structure on output coupling efficiency. e, Effect of inter-substrate spacing in the double-layer MSC structure on output coupling efficiency. f, Effect of inter-substrate spacing in the double-layer MAC structure on output coupling efficiency.

Source data

Extended Data Fig. 5 The Preparation Process of The Chip.

a, Mesa definition; b, Ohmic definition. c, Schottky definition; d, Mesa etching and air-bridged Schottky deposition. e, Bridge metal definition. f, Backside thinning and device separation.

Extended Data Fig. 6 Experimental Setup.

a, The schematic diagram of the testing platform. b, Actual frequency doubler testing environment.

Supplementary information

Supplementary Information

Supplementary Notes 1–7.

Source data

Source Data Fig. 2

Statistical source data.

Source Data Fig. 3

Statistical source data.

Source Data Fig. 4

Statistical source data.

Source Data Fig. 5

Statistical source data.

Source Data Fig. 6

Statistical source data.

Source Data Extended Data Fig. 2

Statistical source data.

Source Data Extended Data Fig. 3

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Source Data Extended Data Fig. 4

Statistical source data.

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Zhou, H., Zhou, T., Zhang, Y. et al. A terahertz nonlinear diode chain based on an asymmetric double-layer topology. Nat Electron (2025). https://doi.org/10.1038/s41928-025-01460-9

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