Fig. 1: Fabricated all-carbon transistor devices and their virtual counterparts.
From: Contact spacing controls the on-current for all-carbon field effect transistors
a The predominant chirality of the carbon nanotubes (CNT) is (9,8) as seen from the absorption spectrum of the CNT suspension, where the 1400 nm peak corresponds to the (9,8)-CNTs. b Scanning electron micrograph of a graphene-CNT-graphene device. An approximately 100 nm long CNT bridges the graphene source- and drain-electrodes. Scale bar: 100 nm. c In the virtual all-carbon transistor, the CNT channel and graphene electrodes are treated quantum-mechanically at the atomistic level. The channel- and contact length is given by Lchannel and Lcontact, respectively. d Schematic view of the all-carbon field effect transistor. The CNT/graphene spacing is denoted with dgr/CNT and the graphene layers serve as the source- (ϕS) and drain- (ϕD) electrodes, respectively. The gate-electrode is denoted with ϕG. The SiO2 oxide layer is 300 nm thick (orange) and isolates the carbon system from the highly doped Si gate electrode on top of the Si substrate (blue).
