Fig. 1: Twisted monolayer-bilayer graphene with 1° angle.
From: Abundant electric-field tunable symmetry-broken states in twisted monolayer-bilayer graphene
a The schematic of our tMBG device and the structure of moiré pattern formed by monolayer graphene and Bernal stacked bilayer graphene. The positive electric displacement field (\(D\)) is defined as pointing from monolayer to bilayer graphene. The black arrows manifest the moiré wavelength. b, c Longitudinal resistance \({R}_{{xx}}\) measured at T = 28 mK and \(B\,=\,0\,{{\mbox{T}}}\) (b) and antisymmetrized transverse resistance \({R}_{{yx}}\) measured at T = 100 mK and \({{\mbox{|}}}{B}_{\perp }{{\mbox{|}}}\,=\,0.5\,{{\mbox{T}}}\) (c). The top and bottom axis shows the filling factor (\(\nu\)) of a moiré unit cell and carrier density (n) clearly. d Typical calculated band dispersion of tMBG with 1° twist angle at D = 0.4 V/nm and D = −0.4 V/nm. Flat bands are highlighted and their Chern numbers are labeled.
