Fig. 4: HRTEM images and EDS analysis of SnGe microdots annealed at 325 °C. | Communications Materials

Fig. 4: HRTEM images and EDS analysis of SnGe microdots annealed at 325 °C.

From: Growth of α-Sn on silicon by a reversed β-Sn to α-Sn phase transformation for quantum material integration

Fig. 4

a, b Two microdots, both being α-Sn capped with β-Sn. c A small β-Sn dot. d–f are high-angle annular dark-field (HAADF) STEM image and EDS analysis of the microdot in a, while g–i are corresponding analyses of the microdot in b. j–l are HRTEM images of the microdot in a. The insets show FFT of the boxed regions. Panel j corresponds to the α-Sn region at the bottom of the microdot (near SiO2 interface). Panel k corresponds to the relatively Ge-rich region at the corner of the microdot. Panel l corresponds to the boundary between α-Sn and β-Sn phase.

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