Fig. 6: HRTEM images of SnGe microdots annealed at 350 °C. | Communications Materials

Fig. 6: HRTEM images of SnGe microdots annealed at 350 °C.

From: Growth of α-Sn on silicon by a reversed β-Sn to α-Sn phase transformation for quantum material integration

Fig. 6

a A SnGe microdot with a “trapezoid” morphology dominated by α-Sn. b A SnGe microdot with a “dome” morphology dominated by β-Sn. c A zoomed-in HRTEM image of a pure α-Sn region in the SnGe microdot shown in Figure a. To show the crystal planes more clearly, the boxed region in c is highlighted in d by converting the brightness contrast into color contrast, i.e., red for brighter and blue for darker regions. Panel e shows a Fourier transform of d in order to obtain the d spacing and the corresponding Miller indices, as labeled in d and e. Panels fh zoomed into an α/β overlapped region of Figure a, showing Moiré fringes due to vertical overlapping of α-Sn planes with β-Sn(200) planes. Panels ik correspond to a pure β-Sn microdot.

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