Fig. 1: Crystal and magnetic structures of HoAgGe.
From: Tunable topological transitions in the frustrated magnet HoAgGe
a A sketch of the crystal structure of HoAgGe. b A view along the c-axis, highlighting the twisted kagome network of Ho atoms in the ab-plane. c–f The low-temperature magnetic structure of HoAgGe under different magnetic fields applied along the [120] crystallographic direction. The [120] direction, relative to the crystal plane, is indicated by the black arrow. Solid lines represent the crystallographic unit cells. Red arrows in (c–f) denote the spin directions. “U” and “D” refer to up and down spins, respectively. c shows the ground state (B = 0) UDD structure. The numbers 1, 2, and 3 correspond to Ho1, Ho2, and Ho3 atoms, as defined in the main text. At a small magnetic field B1, one down spin (D) of Ho1 flips, leading to the UUD structure (d). As the magnetic field increases to B2, another Ho1 down spin flips, resulting in the UUU structure (e). At the saturated field, B3, spins of all Ho3 atoms flip, producing the UUU(1) structure (f). These magnetic structures were determined in a previous study10. The green dashed lines represent the magnetic unit cell.
