Fig. 3: C-AFM equivalent circuit and simulated out-of-plane potential distribution in the flake.
From: Anisotropic charge transport in 2D single crystals of Ti3C2Tx MXenes
a Equivalent circuit of the C-AFM measurement on an individual few-layer flake. b, c Simulated potential distribution within the flake below the conductive tip for two different anisotropy values. d Simulated potential distribution at the flake surface, for various anisotropy values. e Simulation of the equivalent radius req as a function of the anisotropy. req is defined as the radius corresponding to the area where 75% of the potential drop occurs at the flake surface.
