Fig. 4: Individual flake resistivity measurements on patterned devices.
From: Anisotropic charge transport in 2D single crystals of Ti3C2Tx MXenes
a Optical microscope images of a Ti3C2Tx flake and Au contacts patterned on the same flake. b V–I characteristics obtained with four-contact measurements on individual Ti3C2Tx flakes. c In-plane resistivity values of Ti3C2Tx individual flakes, combining this work and literature25,26,27,47,48,49. The datapoints for this work gather values from four-contact measurements on patterned devices and the resistivity value obtained using finite element simulation combined with C-AFM results, as described in Fig. 2. The error bars include the errors related to the geometry measurements from AFM topography, as well as the noise of the resistance measurement.
