Fig. 3: Hall effect of Ce₃TiSb₅ in the magnetic ordered state.

a Total Hall resistivity as a function of H near and below T_N1. ρ_yx(H) shows clear history dependence. The curves are vertically shifted for clarity. The arrows indicate the direction of the field sweep in the Hall effect measurements. b Field-dependent magnetization is featureless at the same field and temperature. c Loop-shaped topological Hall resistivity \({\rho }_{yx}^{L}\), derived from \({\rho }_{yx}^{-+}-{\rho }_{yx}^{+-}\), where the superscripts “ − + ” and “ + − ” mean the direction of field sweep. d \({\rho }_{yx}-{\rho }_{yx}^{L}\) as a function of H at various T. Note that for 7 and 5 K, \({\rho }_{yx}^{L}\) has no contribution, so \({\rho }_{yx}-{\rho }_{yx}^{L}\) is the same as ρ_yx. The dashed lines indicate the regime of H² dependence that moves to higher fields as T rises. e The extracted topological Hall resistivity \({\rho }_{yx}^{T}\). f Hall resistivity measured on a second Ce₃TiSb₅ sample (S2) grown in the same batch.