Fig. 4: TEM characterization of STO/GaN interface. | Communications Engineering

Fig. 4: TEM characterization of STO/GaN interface.

From: Heterogeneous integration of high-k complex-oxide gate dielectrics on wide band-gap high-electron-mobility transistors

Fig. 4

a Plan-view scanning electron microscope (SEM) image of HEMT device, black box represents region of focused ion beam (FIB) milling for transmission electron microscope (TEM) analysis. b Cross-sectional TEM image of SrTiO3 (STO)/GaN interface. The inset shows selected area electron diffraction (SAED) pattern of the transferred STO.

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