Fig. 3: Results of the quasi-1D model for gate-all-around nanosheet field-effect transistors with various cross-sections | Communications Engineering

Fig. 3: Results of the quasi-1D model for gate-all-around nanosheet field-effect transistors with various cross-sections

From: Combining quasi-one-dimensional modeling with region-wise structure analysis for rapid technology computer-aided design simulations of gate-all-around MOSFETs

Fig. 3

Three cross-sections of an n-type device are considered, with a gate length of 12 nm and a channel thickness of 5 nm. The integrated electron density, quasi-Fermi potential, and I–V characteristics are compared with technology computer-aided design simulation results. a Cross-section with a channel width of 12 nm and a rounded corner. b Cross-section with a channel width of 20 nm and no rounded corner. c Cross-section with a channel width of 20 nm and a rounded corner.

Back to article page