Table 1 Summary of the TC and spin polarization in various FM/semiconductor materials
From: Emerging ferromagnetic materials for electrical spin injection: towards semiconductor spintronics
FM injector | Heterojunction structure | TC (K) | Spin polarization | Characterization of P | Main applications | Refs. |
|---|---|---|---|---|---|---|
CoMnSi | CoMnSi/Al2O3/CoFeSi | ∼985 | ∼ 61% at 10 K | Julliere’s formula | MRAM | |
Co2FeAlxSi1-x | Co2FeAlxSi1-x/GaN | 1100 ± 20 | ∼20% at 300 K | nonlocal Hanle Signal | spin lasers | |
Ga1-xMnxAs | Ga1-xMnxAs/GaAs | ∼190 | ∼ 80% at 4.6 K | oblique Hanleeffect technique | light-emitting diode (LED) | |
Mn5Ge3 | Mn5Ge3/Ge | ∼296 | 42 ± 5% at 1.2 K | Andreev reflection spectroscopy | spin computing circuits | |
Fe3Si | Fe3Si/Si | ∼803 | 7-30% at 300 K | Nonlocal lateral spin Valve signal | spin computing circuits | |
Fe3GeTe2 | Fe3GeTe2/hBN/ Fe3GeTe2 | ≤220 | ∼66% at 4.2 K | Julliere’s formula | MRAM | |
Fe5GeTe2 | Fe5GeTe2/graphene | ∼310 | 1.2-44.9% at 300 K | Nonlocal lateral spin Valve signal | spin computing circuits | |
Co | Co/TiOx/ graphene | ∼1400 | ∼12.5% at 300 K | Fert-Jaffres calculations | spin computing circuits | |
CoFe | CoFe/MgO/Si | ∼1250 | ∼43% at 300 K | Nonlocal Hanle signal | spin computing circuits |
