Fig. 4: Cross-interface diffusion.
From: Next-generation electronics by co-design with chalcogenide materials
a Low-magnification STEM image of BixSb2-xTe3 (BST)/NiM/Ni interface where M denotes mixture of Bi, Sb, and Te. b Energy Dispersive Spectra (EDS) maps showing distribution of Bi, Sb, Te, and Ni at the interface. c Atomic-resolution STEM image of the interface for the dashed box in (a). Reproduced, with permission of ACS, from ref. 235. d Low-magnification STEM image of Pd/xPBT/Bi2Te3 heterostructure grown on a Si(111) substrate where xPBT is a Pd diffusion induced intermediate Pd1+x(Bi0.4Te0.2)2 phase. Reproduced, with permission of ACS, from ref. 238. Figure showing interlayer diffusion. e, f Synthesis of TiSe2 on TiO2 substrate by the diffusion of Ti. e Scanning Tunneling Microscopy (STM) image showing the surface atomic structure of TiSe2. f The Fermi surface of TiSe2 grown on TiO2 as shown by Angle Resolved Photoemission Spectroscopy (ARPES). Reproduced, with permission of IOP, from ref. 243. The TiSe2 atomic and electronic structure is the same as cleaved bulk TiSe2 crystals except for a shift of the Fermi level due to charge transfer between the film and the substrate.
