Fig. 1: A heater embodying NbO_x-based Mott memristor and its electrical characteristics.

a A schematic illustration of the device stack where a NbO_x Mott memristor and a heater are integrated. b The equivalent electrical circuit of the device. The NbO_x Mott memristor and the heater are electrically isolated but thermally connected. c The thermal circuit of the integrated device and its equivalent circuit. d The effective heater temperature estimation scheme. e A \((R/{R}_{300{\rm{K}}}-1)-({T}_{{\rm{H}}}-300{\rm{K}})\) plot for fitting the empirical thermal coefficient of resistance (TCR) of the heater. Each point was obtained by averaging the last three period of resistances in Supplementary Fig. 2. The standard deviation of each points was less than 0.0002. f The heater resistance as a function of the heater voltage (\({V}_{{\rm{H}}}\)) fabricated on the three substrates. g The heater temperature as a function of heater voltage calibrated from (f) using the TCR. h The NDR I \(I-V\) curves of Mott memristors at various \({V}_{{\rm{H}}}\) and the ambient temperatures, fabricated on the three substrates. Here, Set (1) and Set (2) each consist of two NDR curves, one obtained by varying the heater voltage and one by varying the ambient temperature, where the curves in each set are identical. i The thermal resistance representing the heater efficiency and the heat loss (\(1-{T}_{{\rm{M}}}/{T}_{{\rm{H}}}\)) of the integrated device fabricated on the three different substrates.