Table 2 The energy consumption of TRNG systems at different scales and array sizes.
From: Enhancing Johnson-Nyquist noise for high-performance Mott memristor-based oscillatory TRNG
Device | Substrate | Energy for Heater (μJ/bit) | Energy for T flip-flop (μJ/bit) | Energy for Mott oscillator (μJ/bit) | Total Energy (μJ/bit) |
|---|---|---|---|---|---|
5 μm N = 1 | SiO2/Si | 1.9 | 0.646 | 0.0035 | 2.55 |
Eagle XG | 0.1 | 0.75 | |||
PI | 0.03 | 0.68 | |||
5 μm N = 128 | SiO2/Si | 0.33 | 0.98 | ||
Eagle XG | 0.02 | 0.67 | |||
PI | 0.006 | 0.66 | |||
130 nm N = 1 | SiO2/Si | 0.0013 | 0.026 | 0.031 | |
130 nm N = 128 | SiO2/Si | 0.00023 | 0.030 |
