Fig. 2: Device structures and characteristics of ferroelectric superconducting quantum interference device (FeSQUID) and heater cryotron (hTron).
From: Energy-efficient cryogenic ternary content addressable memory using ferroelectric SQUID
a Device structure and circuit symbol of a FeSQUID. b Polarization-voltage characteristics of a Lead Zirconium Titanate (PZT) ferroelectric. c Current-voltage characteristics for two ferroelectric polarization states. d False colored scanning electron microscope image of a fabricated hTron device. WSi superconductor is used to form the gate and the channel, and SiO2 is used as the dielectric material to separate them. Illustration of gate-controlled switching of a hTron channel when e IG < ISW, keeping the channel in its superconducting state, and f IG > ISW, switching the channel to its resistive state. g Gate current-controlled switching of the hTron channel. Note, the plot uses two separate y-axes---left for gate current (IG) and right for channel current (ICh). While the channel bias current (IB) and the gate switching current (ISW) appear visually aligned, they represent distinct quantities and are not numerically equal.
