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Showing 1–8 of 8 results

Advanced filters: Author: Ahmedullah Aziz Clear advanced filters

A steep-slope transistor based on abrupt electronic phase transition

The intrinsic properties of conventional semiconductors limits the speed and efficiency of field-effect transistors. Here, the authors take advantage of the insulator-to-metal transition in vanadium dioxide to create a transistor with reversible and steep-slope switching at room temperature.

Nikhil Shukla
Arun V. Thathachary
Suman Datta
ResearchOpen Access07 Aug 2015
Nature Communications

Volume: 6, P: 1-6
Energy-efficient cryogenic ternary content addressable memory using ferroelectric SQUID

Shamiul Alam
Simon Thomann
Ahmedullah Aziz
ResearchOpen Access01 Sept 2025
npj Unconventional Computing

Volume: 2, P: 1-9
CMOS-compatible ising machines built using bistable latches coupled through ferroelectric transistor arrays

Antik Mallick
Zijian Zhao
Nikhil Shukla
ResearchOpen Access27 Jan 2023
Scientific Reports

Volume: 13, P: 1-9
A three-terminal non-volatile ferroelectric switch with an insulator–metal transition channel

Jaykumar Vaidya
R. S. Surya Kanthi
Nikhil Shukla
ResearchOpen Access09 Feb 2022
Scientific Reports

Volume: 12, P: 1-7
A non-volatile cryogenic random-access memory based on the quantum anomalous Hall effect

Shamiul Alam
Md Shafayat Hossain
Ahmedullah Aziz
ResearchOpen Access12 Apr 2021
Scientific Reports

Volume: 11, P: 1-9
In-pixel foreground and contrast enhancement circuits with customizable mapping

Md Rahatul Islam Udoy
Md Mazharul Islam
Ahmedullah Aziz
ResearchOpen Access28 Jan 2025
Scientific Reports

Volume: 15, P: 1-10
Cryogenic memory technologies

This Review examines the development of cryogenic memory technologies—including non-superconducting memories, superconducting memories and hybrid memories—and their potential application in superconducting single-flux quantum circuits and quantum computers.

Shamiul Alam
Md Shafayat Hossain
Ahmedullah Aziz
Reviews02 Mar 2023
Nature Electronics

Volume: 6, P: 185-198
Machine learning-powered compact modeling of stochastic electronic devices using mixture density networks

Jack Hutchins
Shamiul Alam
Ahmedullah Aziz
ResearchOpen Access16 Mar 2024
Scientific Reports

Volume: 14, P: 1-9