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Recent work reported plasmon-assisted tunneling in a double quantum dot coupled to a plasmon mode in a quantum Hall plasmon resonator. Here, the authors leverage this system to achieve broadband dispersive readout of a semiconductor charge qubit formed by a double quantum dot.

The authors study a topological insulator (TI) sandwiched between two magnetic TIs. By keeping one of the magnetic TIs insulating, while tuning the other one into a metallic regime, they find half quantized anomalous Hall conductance, a boundary signature consistent with a quantized axion field.

The authors report an experimental study of the Hall effect measuring electrical quantities in ultracold fermionic quantum simulators. This provides a way forward in measuring transport properties in these platforms and verifying long-standing theoretical predictions.

Vortex dynamics and mutual friction in quantum fluids are intimately connected to the fundamental properties of superfluids. Here, the authors reveal previously unexplored mechanisms underlying the mutual friction coefficients in ultracold Fermi superfluids in the unitary limit, suggesting bound quasiparticles within the vortex core play a significant role.

A new platform comprising large-scale 2D arrays of quantum dots patterned with sub-nanometre precision, with each quantum dot defined by tens of phosphorus atoms doped into silicon, allows for analogue simulation of quantum materials on arbitrary lattices.

The dynamics of hole-conjugated fractional quantum Hall states is poorly understood due to the limitations of current experimental probes. Here the authors study the high-frequency dynamics of edge modes at filling factor 2/3, precisely identifying the tunneling charge and damping of constituent charge modes.

Symmetry breaking is key to numerous notable effects, for instance, the emergence of a Rashba interaction at interfaces between two materials. Here, Zhang, Ding, and coauthors succeed in breaking in-plane mirror symmetries via crystallographic engineering, and observe a giant non-linear Hall effect and current induced magnetization at room temperature.

The anomalous Hall effect is a macroscopic manifestation of a quantum mechanical effect. Here, Uelandet al. report the observation of a high Hall conductivity in the heavy-fermion compound UCu5, a metallic system, and explain its origin in terms of geometric frustration effects.

Spin-orbit torques are a well-established method for the control of magnetization, the key ingredients for conventional spin-orbit torques being a conductive material with a strong spin-orbit interaction. Here, Tang, Zhang and Cheng show that in antiferromagnetic insulators, the topological phase can support a unique form of Neel spin-orbit torque driven by adiabatic currents, which suppresses joule heating.

The spin Hall effect and its inverse allow conversion between charge and spin currents in both magnetic and nonmagnetic materials. Weiet al.observe an anomaly in the temperature dependence of the inverse spin Hall effect, which suggests that it can also be used as a sensor for very small magnetic moments.

Intrinsic anomalous Hall effect has been observed in twisted graphene multilayers, but these structures are typically not energetically favorable. This study extends these observations to Bernal-stacked tetralayer graphene, which is the most stable configuration of four-layer graphene.

Using a system to adjust the strength of cavity vacuum fields penetrating a Hall bar, a study describes the effect of the vacuum field of a cavity on electronic correlations in quantum Hall systems.

A large-twist-angle bilayer graphene platform exhibits a quantized ratio of displacement to magnetic field at Landau-level crossings, offering a route to high-resolution cryogenic magnetometry.

Graphene was one of the first materials proposed to host the quantum spin Hall effect. However, its weak intrinsic spin-orbit interaction means that observing such an effect requires modifying the graphene band structure. Here, Ghiasi et al. combine graphene with CrPS₄ and detect quantum spin Hall states at zero magnetic field.

The current known two-dimensional topological insulators with small band gaps limit the potential for room temperature applications. Here, Chen et al. observe a sizable gap of 129 meV in a 1T'-WSe₂ single layer grown on bilayer graphene with in-gap edge state near the layer boundary.

Metamaterials enable the control and manipulation of light on subwavelength scales, allowing numerous optical device applications. Here, the authors show the selective excitation of spatially confined modes in an anisotropic hyperbolic metamaterial, based on the photonic spin Hall effect.

Previous work has shown that helical domain walls can form between states of different spin-polarization during a ferromagnetic spin transition in the fractional quantum Hall regime. Here, the authors study the transport through a single helical domain wall and find strong deviations from a simplified theory of weakly interacting edge channels.

Superlattices, with a length scale and structure that differs from the parent lattice of the host material, are well-known to allow for remarkable new electronic and magnetic properties. Here, Xie et al. synthesize Cr_1/4TaS₂, and find that it exhibits an unusual anomalous Hall effect below the Néel temperature even in stoichiometric high-quality crystals.

The complex electronic motion in the quantum Hall regime in semiconductors has so far eluded analysis of its microscopic structure. Here, the authors use scanning gate microscopy to measure the spatial structure of transport inside a metal in this regime, opening the way for localized manipulation of the electronic states.

Focused ion beam-based nanofabrication enables the production of 3D helical devices from single-crystalline Co₃Sn₂S₂. The resulting chiral geometry-driven symmetry breaking produces a diode-like electrical response in transport measurements.

A unidirectional magnetoresistance observed in bilayer metal films could be used to add directional sensitivity to conventional magnetic sensors based on anisotropic magnetoresistance.

The spin Hall effect induces spin currents in nonmagnetic layers, which can control the magnetization of neighbouring ferromagnets. The transparency of the interface is shown to strongly influence the efficiency of such manipulation.

Magnetically intercalated transition metal dichalcogenides provide a platform to study the interplay of magnetism, electronic band structures, and correlations. Here the authors demonstrate a nearly magnetization-free anomalous Hall effect, collinear antiferromagnetism and non-Fermi liquid behavior in V_1/3NbS₂.

The topological Hall effect is observed at above room temperature in a bilayer heterostructure composed of thulium iron garnet and platinum, suggesting the formation of skyrmions in a magnetic insulator through the interfacial Dzyaloshinskii–Moriya interaction.

The study shows a micron-scale polariton structure where an artificial gauge field creates topological, non-reciprocal edge transport without strong magnetic fields, overcoming key limits for topological polariton lasers and devices.

The anomalous Hall effect has been observed in high-quality epitaxial thin films of non-collinear antiferromagnet Mn₃Pt, and can be switched on and off using an electric field.

Tilgner et al. demonstrated the formation of the quantum spin Hall insulator bismuthene on SiC, intercalated underneath a protective graphene layer. A hydrogen-induced orbital filtering effect is the driving force behind this reversible phase transition.

A technique that allows the electrical detection of spin-polarized transport in semiconductors without disturbing the spin-polarized current or using magnetic elements has now been demonstrated. The approach could lead to the integration of spintronics elements into semiconductor microelectronic circuits.

Graphene on boron nitride gives rise to a moiré superlattice displaying the Hofstadter butterfly: a fractal dependence of energy bands on external magnetic fields. Now, by means of capacitance spectroscopy, further aspects of this system are revealed—most notably, suppression of quantum Hall antiferromagnetism at particular commensurate magnetic fluxes.

Monolayer graphene in the quantum Hall regime exhibits a third-order nonlinear Hall response, which is robust against variations in magnetic field and temperature and provides insights into the interaction of chiral edge states.

A magnetoresistance effect that occurs in a platinum layer deposited on a magnon junction consisting of two insulating magnetic yttrium iron garnet layers separated by an antiferromagnetic nickel oxide spacer layer could be used to create spintronic and magnonic devices that are free from Joule heating.

It is predicted that fractionally charged skyrmions, topologically protected vortex-like spin configurations, may exist in systems exhibiting fractional quantum Hall states. Here, the authors demonstrate the existence of such objects in GaAs single quantum wells.

Fractional quantum Hall states in 2D electron gases arise due to strong electron-electron interactions, which makes a general theoretical understanding difficult. Fu et al. present data showing the ν = 5/3 quantum Hall state has a 3/2 plateau in the diagonal resistance that has not been captured by existing models.

Non-local transport measurements on mercury telluride quantum wells show clear signatures of the ballistic spin Hall effect. The ballistic nature of the experiment allows the observed effect to be interpreted as a direct consequence of the band structure of these semiconductor nanostructures, rather that being caused by impurity scattering.

Andreev reflection is normally known to occur at a metal-superconductor interface. Here, Hashisaka et al. observe an Andreev-like process in a narrow junction between fractional and integer quantum Hall states originating from a topological quantum many-body effect instead of superconductivity.

Dirac fermions at ap–njunction can exhibit a wide variety of unusual properties. Here, the authors investigate the dynamics of such fermions in a graphene junction using shot noise measurements and demonstrate the crucial role of junction length.

Fractionally charged excitations at zero magnetic field in twisted MoTe₂ bilayers, a recently discovered fractional quantum anomalous Hall system, are observed via anyon-trions, excitonic complexes formed by binding a trion to a fractional charge.

Ohmic contacts to n-type molybdenum disulfide can be created over a temperature range from millikelvins to 300 K using a window-contacted technique, which leads to evidence for fractional quantum Hall states at filling fractions of 4/5 and 2/5 in the lowest Landau levels of bilayer molybdenum disulfide devices.

The roles of orbitofrontal and cingulate cortex in emotional decisions remain unclear. Here the authors show distinct timing between caudal orbitofrontal and cingulate signals, that orbitofrontal stimulation increases avoidance, and that physiological responses mirror behavior.

2D transition metal ditellurides exhibit nontrivial topological phases, but the controlled bottom-up synthesis of these materials is still challenging. Here, the authors report the layer-by-layer growth of large-area bilayer and trilayer 1T’ MoTe2 films, showing thickness-dependent ferroelectricity and nonlinear Hall effect.

Disorder may play a dominant role in determining the nonlinear Hall effect in a topological material. Here, Du et al. derive formulas of the nonlinear Hall conductivity and construct the general scaling law of the nonlinear Hall effect in a tilted two dimensional Dirac model.

The quantum Hall effect takes place in a two-dimensional electron gas under a strong magnetic field and involves current flow along the edges of the sample. In the fractional regime, counter-propagating modes that carry energy but not charge — the so-called neutral modes — have been predicted but never observed. These authors report the first direct observation of these elusive modes.

Noncoplanar magnets are promising for spintronics but are rare and challenging to find. Here, the authors provide a chemical design strategy to produce materials with noncoplanar magnetic orders, and strong signatures of their magnetism in the Hall effect.

The fractional quantum Hall effect offers a potential platform to harness non-Abelian anyons. Here, the authors report fractional quantum Hall states in trilayer graphene and drive quantum phase transitions between neighbouring states.

Energy relaxation crucially impacts transport properties of mesoscopic devices. Here the authors show that energy can be distributed between distant parts of the sample, which may provide a resolution to an outstanding puzzle concerning energy conservation in transport through quantum Hall edges.

Magnetic imaging reveals that a transport current flows in the interior of Cr-(Bi,Sb)₂Te₃ samples within the quantum anomalous Hall regime, contrary to the common assumption of current flow along the sample edge.

Control of magnetization is important for applications in spintronics. Now, the piezomagnetic effect allows strain to control the anomalous Hall effect in a metal at room temperature by rotating its antiferromagnetic order.

A superconductor placed near a quantum Hall edge can show emergent excitations with a range of exotic features. For instance, such heterostructures are predicted to exhibit non-local signatures that are direct extensions of ‘Andreev reflection’.

The spontaneous topological Hall effect, combining non-coplanar antiferromagnetic order with finite scalar spin chirality in the absence of a magnetic field, is now experimentally demonstrated for the triangular lattice compounds CoTa₃S₆ and CoNb₃S₆.