Applying in situ TEM techniques to GST-based vertical PCRAM cells, we directly observed the DC set switching process of real devices for the first time. The results show that the microstructure of crystalline GST matrix is an important structural parameter determining the local temperature distribution. In the case of highly crystallized GST matrix, the device failure occurred via two-step void formation due to the polarity-dependent electromigration.
- Kyungjoon Baek
- Kyung Song
- Sang Ho Oh
