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Showing 1–13 of 13 results
Advanced filters: Author: Dashan Shang Clear advanced filters

  • Dendritic computing is a promising approach to enhance the processing capability of artificial neural networks. Here, the authors report the development of a neurotransistor based on a vertical dual-gate electrolyte-gated transistor with short-term memory characteristics, a 30 nm channel length, a low read power of ~3.16 fW and read energy of ~30 fJ for dendritic computing.

    • Han Xu
    • Dashan Shang
    • Ming Liu
    ResearchOpen Access
    Nature Communications
    Volume: 14, P: 1-11

  • Physical reservoirs that contain intrinsic nonlinear dynamic processes could serve as next-generation dynamic computing systems. Here, Liu et al. introduced an interface-type transistor based on oxygen ion dynamics to perform reservoir computing.

    • Zhuohui Liu
    • Qinghua Zhang
    • Chen Ge
    ResearchOpen Access
    Nature Communications
    Volume: 14, P: 1-11

  • The application of 2D MoS2 flexible integrated circuits (ICs) is currently limited by the material quality over large areas and the device fabrication technology. Here the authors report a gate-first fabrication technique to realize wafer-scale monolayer MoS2 ICs on rigid and flexible substrates with high performance and low power consumption.

    • Jian Tang
    • Qinqin Wang
    • Guangyu Zhang
    ResearchOpen Access
    Nature Communications
    Volume: 14, P: 1-8

  • Co-designing hardware platforms and neural network software can help improve the computational efficiency and training affordability of deep learning implementations. A new approach designed for graph learning with echo state neural networks makes use of in-memory computing with resistive memory and shows up to a 35 times improvement in the energy efficiency and 99% reduction in training cost for graph classification on large datasets.

    • Shaocong Wang
    • Yi Li
    • Ming Liu
    ResearchOpen Access
    Nature Machine Intelligence
    Volume: 5, P: 104-113

  • Multiferroic binary oxides with the perovskite structure have been very rare. Here, Cong et al. report magnetically-driven ferroelectricity and a large magnetoelectric effect in a binary perovskite compound Mn2O3 at low temperatures.

    • Junzhuang Cong
    • Kun Zhai
    • Young Sun
    ResearchOpen Access
    Nature Communications
    Volume: 9, P: 1-7

  • Designing reliable, scalable and high speed computing systems remains a challenge. Here, the authors identify noncentrosymmetric orthorhombic phase in HZO film and demonstrate a CMOS compatible 3D Vertical HZO-based ferroelectric diode array with self-selective property and 20 ns of speed operation.

    • Qing Luo
    • Yan Cheng
    • Ming Liu
    ResearchOpen Access
    Nature Communications
    Volume: 11, P: 1-8

  • Control of the electrical properties of materials by means of magnetic fields or vice versa may facilitate next-generation spintronic devices, but is still limited by their intrinsically weak magnetoelectric effect. Here, the authors report the existence of an enhanced magnetoelectric effect in a Y-type hexaferrite, and reveal its underlining mechanism.

    • Kun Zhai
    • Yan Wu
    • Young Sun
    ResearchOpen Access
    Nature Communications
    Volume: 8, P: 1-8