This article demonstrates an ultrathin e-synapse having high yield, minimal performance variation, and extremely low power consumption based on a Al2O3/graphene quantum dots/Al2O3 sandwich structure that was fabricated by using atomic layer deposition. It showed both high device-to-device and cycle-to-cycle reproducibility with high stability, endurance, and switching uniformity, because of which the essential synaptic behaviors could be observed. This implementation of an e-synapse with an Al2O3/graphene quantum dots/Al2O3 structure should intensify motivation for engineering e-synapses for neuromorphic computing.
- Zhongwei Xu
- Fushan Li
- Tae Whan Kim