The rapid advancement of extended reality technologies has heightened the need for high-mobility, low-temperature-processable thin-film transistors. Here, the authors employ a metal-induced crystallization approach with aluminum-capped zinc tin oxide films, achieving enhanced carrier mobility through hydrogen-assisted annealing, underscoring the promise of this method for advanced oxide electronics.
- Dayul Nam
- Seong-Pil Jeon
- Sung Kyu Park
