The polarization of a ferroelectric material by an electric field can be used as the basis of a memory device. Recording a piece of information in this way involves increasing the size of a region with one polarity at the expense of those having the opposite polarity, and hence the movement of the domain walls separating these regions. This paper reports multi-scale simulations that reproduce the domain growth rates observed experimentally, and suggest a nucleation process that is energetically realistic.
- Young-Han Shin
- Ilya Grinberg
- Andrew M. Rappe