ReRAM devices based on halide perovskites have recently emerged as a new class of data storage device, where the switching materials used in these devices have attracted huge attention in recent years. In this study, we compare the resistive switching characteristics of ReRAM devices based on a quasi-2D halide perovskite, (PEA)2Cs3Pb4I13, to those based on 3D CsPbI3. Astonishingly, the ON/OFF ratio of the (PEA)2Cs3Pb4I13-based memory devices was much higher than that of the CsPbI3 device. Also this device retained a high ON/OFF current ratio for two weeks under ambient conditions, whereas the CsPbI3 device degraded rapidly and showed unreliable memory properties after five days. We strongly believe that quasi-2D halide perovskites have potential in resistive switching memory based on their high ON/OFF ratio and long-term stability.
- Hyojung Kim
- Min-Ju Choi
- Ho Won Jang