Nonpolar resistive switching reproducibly occurs in arrays of nanoscale cells composed of multilayered NiO/Pt nanowires with significantly reduced switching voltages, narrow switching voltage distributions and a robust multilevel memory effect. A high resistance ratio (∼105) between the high- and low-resistance states in nanoscale cells enables stable multilevels to be induced easily by a series of pulsed voltages. The existence of intermediate resistance states in NiO/Pt nanowire arrays can be well explained by the binary-resistor model combined with energy perturbations induced by the pulse voltage. Our bottom-up approach and proposed mechanism explain the controllable multilevel memory effect.
- Yen-Chun Huang
- Po-Yuan Chen
- Chih-Huang Lai
