Advanced search

Filter By:

Journal Check one or more journals to show results from those journals only.

Choose more journals

Article type Check one or more article types to show results from those article types only.
Subject Check one or more subjects to show results from those subjects only.
Date Choose a date option to show results from those dates only.

Custom date range

Clear all filters
Sort by:
Showing 1–3 of 3 results
Advanced filters: Author: Qing-Tai Zhao Clear advanced filters

  • GeSn alloys hold promise for spintronics and quantum computing due to their scalable fabrication and spin manipulation capabilities. Here, the authors study a two-dimensional hole gas in a Ge/GeSn quantum well, revealing enhanced spin-orbit interactions and g-factors, providing key insights for designing GeSn-based spintronic devices.

    • Prateek Kaul
    • Jan Karthein
    • Dan Buca
    ResearchOpen Access
    Communications Materials
    Volume: 6, P: 1-8

  • Ultra-low-power cryogenic complementary metal oxide semiconductor (cCMOS) technology is crucial for quantum computers. This Perspective highlights the challenges of the state-of-the-art technology and proposes solutions to mitigate band-tail effects, control the threshold voltage and achieve ultra-low-power cCMOS devices.

    • Qing-Tai Zhao
    • Yi Han
    • Joachim Knoch
    Reviews
    Nature Reviews Electrical Engineering
    Volume: 2, P: 277-290

  • Mingshan Liu and colleagues fabricate p- and n-channel vertical-type GeSn nanowire MOSFETs and their CMOS components down to 25 nm. The mobility in n-FETs increased 2.5-fold compared to a Ge reference device, a step toward extending Moore’s law beyond the silicon era.

    • Mingshan Liu
    • Yannik Junk
    • Qing-Tai Zhao
    ResearchOpen Access
    Communications Engineering
    Volume: 2, P: 1-9