Memristors based on 2D materials are promising candidates for realizing artificial synapses in next-generation computing. Here, utilizing optimal-power argon plasma treatment, the authors enhance the performance of memristors fabricated from monolayer MoS2, reducing non-linearity and asymmetry in synaptic weight updates and minimizing cycle-to-cycle variability.
- Manisha Rajput
- Sameer Kumar Mallik
- Atikur Rahman
