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Reconfigurable single-walled carbon nanotube ferroelectric field-effect transistors

Rhee et al. report scalable reconfigurable carbon nanotube transistors with a ferroelectric aluminum scandium nitride gate dielectric. They show balanced ambipolar currents, strong memory retention, and enable ternary content-addressable memory with fewer devices than traditional silicon circuits.

Dongjoon Rhee
Kwan-Ho Kim
Deep Jariwala
ResearchOpen Access17 Aug 2025
Nature Communications

Volume: 16, P: 1-12
Fabrication of p-type 2D single-crystalline transistor arrays with Fermi-level-tuned van der Waals semimetal electrodes

The fabrication of high-performance p-type 2D transistors is still challenging. Here, the authors report the realization of wafer-scale p-type 2H-MoTe₂ transistor arrays contacted by Fermi-level tuned semimetallic 1T’-MoTe₂ electrodes, leading to improved contact resistance and device performance.

Seunguk Song
Aram Yoon
Soon-Yong Kwon
ResearchOpen Access07 Aug 2023
Nature Communications

Volume: 14, P: 1-14
Confinement of excited states in two-dimensional, in-plane, quantum heterostructures

Here, the authors observe the lateral confinement of excitons in triangular MoSe₂ quantum dots inside a continuous matrix of monolayer WSe₂. They measure size-dependent exciton confinement in the quantum dots with low-temperature exciton blue shift, and further observe single-photon emission from the smallest dots.

Gwangwoo Kim
Benjamin Huet
Deep Jariwala
ResearchOpen Access28 Jul 2024
Nature Communications

Volume: 15, P: 1-10
Scalable CMOS back-end-of-line-compatible AlScN/two-dimensional channel ferroelectric field-effect transistors

A large array of ferroelectric field-effect transistors with record memory windows, ON/OFF ratios and ON-current density is presented at ~80 nm channel length.

Kwan-Ho Kim
Seyong Oh
Deep Jariwala
Research22 May 2023
Nature Nanotechnology

Volume: 18, P: 1044-1050
Atomic transistors based on seamless lateral metal-semiconductor junctions with a sub-1-nm transfer length

Edge-to-edge metal-semiconductor junctions have the potential to improve the performance of 2D transistors. Here, the authors report a synthetic strategy to fabricate monolayer MoS₂-PtTe₂ heterojunction arrays with sub-1-nm transfer length and enhanced carrier injection compared to vertical 3D metallic contacts.

Seunguk Song
Aram Yoon
Soon-Yong Kwon
ResearchOpen Access22 Aug 2022
Nature Communications

Volume: 13, P: 1-11
Wafer-scale production of patterned transition metal ditelluride layers for two-dimensional metal–semiconductor contacts at the Schottky–Mott limit

Two-dimensional metallic WTe₂ and MoTe₂ layers can be combined with a semiconducting MoS₂ monolayer to create metal–semiconductor junctions that are free from substantial disorder effects and Fermi-level pinning.

Seunguk Song
Yeoseon Sim
Soon-Yong Kwon
Research06 Apr 2020
Nature Electronics

Volume: 3, P: 207-215
Tailoring exciton dynamics in TMDC heterobilayers in the ultranarrow gap-plasmon regime

Mahfujur Rahaman
Gwangwoo Kim
Deep Jariwala
ResearchOpen Access11 Sept 2023
npj 2D Materials and Applications

Volume: 7, P: 1-7

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Reconfigurable single-walled carbon nanotube ferroelectric field-effect transistors

Fabrication of p-type 2D single-crystalline transistor arrays with Fermi-level-tuned van der Waals semimetal electrodes

Confinement of excited states in two-dimensional, in-plane, quantum heterostructures

Scalable CMOS back-end-of-line-compatible AlScN/two-dimensional channel ferroelectric field-effect transistors

Atomic transistors based on seamless lateral metal-semiconductor junctions with a sub-1-nm transfer length

Wafer-scale production of patterned transition metal ditelluride layers for two-dimensional metal–semiconductor contacts at the Schottky–Mott limit

Tailoring exciton dynamics in TMDC heterobilayers in the ultranarrow gap-plasmon regime

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