Using hybrid density-functional calculations, we present period-doubling reconstructions of a 90° partial dislocation in GaAs, for which the periodicity of like-atom dimers along the dislocation line varies from one to two, to four dimers. The electronic properties of a dislocation change drastically with each period doubling, suggesting a new passivation strategy by biasing the competition between these phases through the tuning of the carrier density in the dislocation.
- Ji-Sang Park
- Bing Huang
- William E McMahon
