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Molybdenum disulphide offers some tantalizing advantages over graphene as a material with which to fabricate field-effect transistors. Kimet al. present a comprehensive study of field-effect transistors made from multilayer samples of MoS₂and find that they can achieve high carrier mobilities.

Metal-organic charge transfer has been the inevitable core of microsecond triplet emitters. Here the authors hybridize organic chromophores with transition-metal dichalcogenides to realize microsecond phosphorescence without metal-organic ligand bonding.

Water of aqueous PEDOT:PSS solution was successfully exchanged with ethylene glycol or ethanol solvents using ultrafiltration method. This novel solvent exchange process enables uniform and conformal nano-coating of PEDOT:PSS on hydrophobic substrates without the addition of surfactants. This process can be widely used in fabrication of various sensors or electronic devices using conducting polymers.

Methods to realise anticounterfeiting labels should be fast, easy to implement, cheap, and applicable to several different substrates. Here, the authors demonstrate how to use laser ablation to produce randomly distributed craters that can be used as anticounterfeiting tags.

Here, the authors report the realization of an active pixel image sensor array composed by 64 pairs of switching transistors and phototransistors, based on wafer-scale bilayer MoS₂. The device exhibits sensitive photoresponse under RGB light illumination, showing the potential of 2D MoS₂ for image sensing applications.

By combining the MoS2 channel with the PEDOT:PSS floating layer, a new concept device is proposed. This work demonstrates optoelectronic memory operation with high mechanical endurance through a 1,000-cycle bending test, which also offers multilevel memory programming operation based on light intensity and color.

There is an ongoing need for new anticounterfeiting technologies. Here, the combined effects of capillary and Marangoni flow create randomly oriented MoS_x clusters on a surface, which are used as anticounterfeiting tags.

Sensitive and scalable gas sensors are essential in daily life air-quality monitoring. Here, a monolithically integrated gas sensing circuit based on two-step-grown polycrystalline MoS₂ films is fabricated, showing good switching and NO₂ gas sensing response in a wide detection range of 1 to 256 ppm.

Thin-film phototransistors based on multilayer MoS₂ are of great technological importance, but their photoresponsivity may be hindered by an indirect bandgap. Here, nano-patterning of multilayer MoS₂ overcomes this limitation by inducing trap states within the bandgap, resulting in a high photoresponsivity of 622.2 A W⁻¹.

Stretchable and wearable Ag-PTFE conductors were fabricated by the simple and mature co-sputtering process with variations in the DC/RF power ratio applied to the Ag and PTFE target. A stretching test was conducted 40% strain under all conditions and reversible to confirm that the hysteresis and stretchability were good for DC 5 W:RF 40 W.

We report a unique low-temperature-processed (≤100 °C) method for the scalable deposition of a tellurium nanowire network (Te-nanonet) to fabricate high-performance field-effect transistors (FETs) with stable electrical and optical properties. A maximum mobility of 4.7 cm²/Vs, an on/off current ratio of 1 × 10⁴, and a maximum transconductance of 2.18 µS are achieved. The electrical performance of a Te-nanonet-based transistor array of 42 devices is also measured, revealing stable and uniform results. Finally, to broaden the applicability of p-type Te-nanonet-based FETs, optical measurements are demonstrated over a wide spectral range, revealing an exceptionally uniform optical performance.