Nature Search

Controllable growth of MoO₃ dielectrics with sub-1 nm equivalent oxide thickness for 2D electronics

The integration of 2D semiconductors with high-κ dielectrics is an important requirement for the development of post-silicon electronics. Here, the authors report the thickness-controlled growth of MoO₃ nanoflakes with equivalent oxide thickness down to 0.9 nm, and their application for the realization of 2D electronic devices.

Xueming Li
Shankun Xu
Nengjie Huo
ResearchOpen Access22 Jul 2025
Nature Communications

Volume: 16, P: 1-8
A Monte Carlo Study of Distribution Function P(S) of a Polymer Chain

Mengbo Luo
Xubing Song
Jianmin Xu
Research01 Oct 1995
Polymer Journal

Volume: 27, P: 979-985
In situ training of an in-sensor artificial neural network based on ferroelectric photosensors

In-sensor computing with in-situ training capability is promising for machine vision applications, yet their implementation remains a challenge. Here, the authors demonstrate in-situ training of an in-sensor artificial neural network using ferroelectric photosensors.

Haipeng Lin
Jiali Ou
Jun-Ming Liu
ResearchOpen Access07 Jan 2025
Nature Communications

Volume: 16, P: 1-12
Preparation of epitaxial hexagonal YMnO₃ thin films and observation of ferroelectric vortex domains

Hongzhuang Pang
Fengyuan Zhang
Qiliang Li
ResearchOpen Access21 Oct 2016
npj Quantum Materials

Volume: 1, P: 1-6
Constructing molecular bridge for high-efficiency and stable perovskite solar cells based on P3HT

The poor contact at poly(3-hexylthiophene)/perovskite interface has led to unsatisfactory performance in solar cells. To resolve this issue, the authors introduce a molecular bridge to form a charge transport channel, realizing devices with maximum efficiency value of 22.87% and long-term stability.

Dongdong Xu
Zhiming Gong
Jinwei Gao
ResearchOpen Access17 Nov 2022
Nature Communications

Volume: 13, P: 1-8
Ferroelectric photosensor network: an advanced hardware solution to real-time machine vision

Robust, fast, and low-power hardware platforms are desirable for the implementation of real-time machine vision. Here the authors develop a computing-in-sensor network using ferroelectric photo sensors with remanent-polarization-controlled photo responsivities.

Boyuan Cui
Zhen Fan
Jun-Ming Liu
ResearchOpen Access31 Mar 2022
Nature Communications

Volume: 13, P: 1-12
Induced nano-scale self-formed metal-oxide interlayer in amorphous silicon tin oxide thin film transistors

Xianzhe Liu
Hua Xu
Junbiao Peng
ResearchOpen Access07 Mar 2018
Scientific Reports

Volume: 8, P: 1-7
All-ferroelectric implementation of reservoir computing

While reservoir computing can process temporal information efficiently, its hardware implementation remains a challenge due to the lack of robust and energy efficient hardware. Here, the authors develop an all-ferroelectric reservoir computing system, showing high accuracies and low power consumptions in various tasks like the time-series prediction.

Zhiwei Chen
Wenjie Li
Jun-Ming Liu
ResearchOpen Access16 Jun 2023
Nature Communications

Volume: 14, P: 1-12
Current rectifying and resistive switching in high density BiFeO₃ nanocapacitor arrays on Nb-SrTiO₃ substrates

Lina Zhao
Zengxing Lu
Jun-Ming Liu
ResearchOpen Access08 Apr 2015
Scientific Reports

Volume: 5, P: 1-6
Optimization of hierarchical structure and nanoscale-enabled plasmonic refraction for window electrodes in photovoltaics

In photovoltaics window electrodes must display uniform current transport, as well as high light transmission from the substrate. Here, Han et al.show that quasi-fractal metallic networks provide a practical realization of an electrode structure with an optimal surface coverage and a uniform current density.

Bing Han
Qiang Peng
Jinwei Gao
ResearchOpen Access26 Sept 2016
Nature Communications

Volume: 7, P: 1-8
Thinning ferroelectric films for high-efficiency photovoltaics based on the Schottky barrier effect

An approach to boost the power conversion efficiencies (PCEs) of ferroelectric photovoltaics (PVs) is proposed based on the Schottky barrier effect. This approach leverages the thinning of a ferroelectric film to somewhere close to the depletion width, which can simultaneously suppress the recombination and lower the series resistance. Using this approach, we achieve a PCE up to 2.49% (under 365-nm ultraviolet illumination) in the 12-nm Pb(Zr_0.2Ti_0.8)O₃ ultrathin films. Our study provides insightful guidance on how to design and tailor the ferroelectric films to achieve high PCEs, and also demonstrates the great potential of ferroelectrics for use in ultrathin-film PV devices.

Zhengwei Tan
Lanqing Hong
Jun-Ming Liu
ResearchOpen Access26 Apr 2019
NPG Asia Materials

Volume: 11, P: 1-13

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