Abstract
IN a recent communication1, Melehy and Jarmoc have reported interesting observations of the distribution of temperature in silicon diodes carrying a relatively large current in the forward direction. It is shown here that their observations are readily explained in terms of junction theory, when account is taken of the difference in electron and hole mobilities in silicon.
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References
Melehy, M. A., and Jarmoc, E. A., Nature, 198, 1051 (1963).
Herlet, A., and Spenke, E., Z. angew. Phys., 7, 195 (1955).
Shields, J., Proc. Inst. Elect. Eng. (G. B.), 106, Part B, Supp. No. 15, 342 (1959).
Hall, R. N., Solid-State Electronics (G. B.), 2, 115 (1961).
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DAVIES, L. Heat Liberation in Alloy-junction Silicon Diodes. Nature 200, 1196 (1963). https://doi.org/10.1038/2001196b0
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DOI: https://doi.org/10.1038/2001196b0
