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Growth Mechanism of Silicon Carbide

Nature volume 207, pages 286–287 (1965)Cite this article

Abstract

IT has been suggested1,2 that the growth of silicon carbide crystals takes place by the spiral-growth mechanism. Even though this theory, at the time, did explain the formation of the various polytypes, it did not account for the growth of the crystals in the ‘a’ direction. Recent X-ray work has shown the presence of new polytypes, the formation of which could not be explained by the screw-dislocation mechanism3,4.

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Author notes

  1. T. GABOR

    Present address: Battelle Memorial Institute, Columbus, 1, Ohio

Authors and Affiliations

  1. Westinghouse Research Laboratories, Pittsburgh, 35, Pennsylvania

    T. GABOR

Authors
  1. T. GABOR
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GABOR, T. Growth Mechanism of Silicon Carbide. Nature 207, 286–287 (1965). https://doi.org/10.1038/207286a0

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