Figure 15
From: Diffusion-driven currents in organic-semiconductor diodes
Current density–voltage characteristics for a device with ϕb=0.7 V, μp=1 × 10−9m2Vs−1, Nv=3 × 1026m−3, L=100 nm, T=295 K and ɛ=3ɛ0. The dotted and solid lines are the analytically calculated characteristics for diffusion, drift and the sum of drift and diffusion. The dashed line represents a numerical simulation7 with the exactly same parameters. The inset shows a comparison between the calculated current for a MIM diode, Equation (19), with ϕb–b=0.3 V (red line) and the current calculated with the classical Shockley equation using an ideality factor of unity (solid black line). A good approximation is obtained using an ideality factor of 1.2 (dashed line).
