Extended Data Figure 9: Facile electrode differentiation by self-aligned assembly of ultrahigh- and ultralow-work-function interlayers on Ag.
From: Doped polymer semiconductors with ultrahigh and ultralow work functions for ohmic contacts
a, Schematic of the FET structure. b, c, Transfer characteristics on a linear (b) and semi-logarithmic (c) scales. A monolayer of p-doped P2 or n-doped N1 was self-assembled onto the Ag electrode array from dilute solution. Channel length, 100 μm; channel width, 3 mm; Vd was stepped from 0 V (red) or to −20 V (blue) in −5 V steps. The control FET shows the expected ambipolar behaviour34, whereas the modified electrodes show gate–source Vgs threshold shifts, similar to that observed on Au electrodes.
