Extended Data Figure 10: Integration of precursor n-dopant methodology into self-compensated doped polymers.
From: Doped polymer semiconductors with ultrahigh and ultralow work functions for ohmic contacts
a, b, N4 (a) and N0 (b) with (blue) and without (red) DMBI-H. Pristine polymer films (15-nm-thick N4 and 20-nm-thick N0) and composite films with DMBI-H (1:2 mol/mol r.u.) were spin-cast and baked at 120 °C on a hotplate, and then measured by transmission optical spectroscopy. DMBI-H is (4-(1,3-dimethyl-2,3-dihydro-1H-benzoimidazoyl-2-yl)phenyl)dimethylamine, a precursor n-dopant35. c, Authentic n-doping of N4 films, as a reference. A 30-nm-thick N4 film was spin-cast and then electron-doped to 1.0 electron per r.u. by contact with cobaltocene (Cc; 2 mM in diglyme). N0 has an identical π-conjugated organic semiconductor core to N4, but lacks tethered counter-ions. Whereas N4 exhibits strong doping, N0 exhibits only weak doping under identical conditions, possibly owing to the lower stability of its n-doped state.
