Fig. 2: Photoresponse performance and visible response characteristics under infrared light modulation (5 nm thick C₆₀ device).

a Photocurrent enhancement of the visible 450 and 650 nm responses under infrared 980 nm and 808 light modulation, respectively (450 and 650 nm light power density = 20 mWcm⁻², 808 and 980 nm modulation light power density = 20 mWcm⁻², V_ds = 1 V). b Relationship among modulated I_ph/signal I_ph, modulation light power density and signal light power density. c Schematic diagram of visible region light (405–650 nm) working as signal light under the infrared light-modulation-induced carrier transfer process. The small purple arrow represents signal light-induced charge transfer. d The top panel shows the dynamic photocurrent response for low power density signal light (650 nm with a power of 23.4 μWcm⁻²) under different modulation light power densities (808 nm with 273 mWcm⁻², 163 mWcm⁻², 22.1 mWcm⁻², and 307 μWcm⁻²). The bottom panel shows modulated I_ph (red line) and signal I_ph (blue line) as a function of C₆₀ thickness (signal light: 650 nm with a power of 19.3 mW/cm², modulation light: 808 nm with a power of 20 mW/cm², V_ds = 1 V). Modulated I_ph is the photocurrent under modulation light control, and signal I_ph is the photocurrent of the intrinsic signal light