Fig. 3: Device 2.
From: Direct nanoscopic observation of plasma waves in the channel of a graphene field-effect transistor
a DC drain-source current as a function of the gate voltage; the measurements were made with the device illuminated at 2 THz \(\left( {V_{ds} = - 0.1\,{\mathrm{V}}} \right)\). Inset: Absolute value of the rectified current as a function of the gate voltage (no drain-source bias voltage). The direction of the current flow changes at zero values of the current. b Extracted νpl values for τ between 25 fs and 60 fs. Red dots depict νpl for τ = 40 fs. The inset compares the extracted values of νpl fo τ = 40 fs with the theoretical predictions (cf. Figure 2d)
