Fig. 2: Device performance characterization.
From: Plasmon-induced trap filling at grain boundaries in perovskite solar cells
a Schematic of the cell architecture used in this study. b Current density–voltage (J–V) curves of the champion MAPbI3-based control (with PAT additives) and target (with Au@PAT additives) devices. The inset shows steady-state PCE measurement results of the best control and target MAPbI3 devices. c Statistical distributions of photovoltaic parameters for the control (Cont.) and target (Targ.) PSCs based on MAPbI3, CsFA, and CsFAMA perovskites (based on 40 separate measurements for each condition). d Long-term operational stability results of the control and target MAPbI3-based PSCs
