Fig. 4: Characterization of carrier dynamics under dark and illuminated conditions.
From: Plasmon-induced trap filling at grain boundaries in perovskite solar cells
a Nyquist plots of EIS characterization under dark and illumination at a bias of 0.8 V for MAPbI3-based control and target devices. The inset shows the equivalent electrical circuit model, consisting of a single parallel connection of Rrec and a chemical capacitance (Crec) connected to a series resistance Rs. b tDOS for control and target MAPbI3 perovskite devices in TAS analysis. c Energy-band diagram of the perovskite film representing the carrier recombination and trapping/detrapping processes. d, e Pseudo-colour representation of time-resolved transient absorption spectra for the control and target MAPbI3 films, following 532 nm pulsed laser excitation with various pump fluence
