Fig. 2: Selective excitation of plasmonic/excitonic components in plexcitons.
From: Interacting plexcitons for designed ultrafast optical nonlinearity in a monolayer semiconductor
Reflection spectra of the Ag ND–WS2 plexcitonic system at 100 fs time delay under (a) plexcitonic excitation (2.0 eV), (b) excitonic excitation (2.58 eV), and (c) plasmonic excitation (1.88 eV). To ensure the same fluences absorbed by the sample in each pump excitation situation (roughly estimated by the value of the incident fluence multiplied by the extinction coefficient), the incident fluences for pump excitation at 2.0 eV, 2.58 eV, and 1.88 eV are tailored to be 2.0 µJ cm−2, 8.0 µJ cm−2, and 3.0 µJ cm−2, respectively. The grey dashed lines are the plexciton reflection spectrum unaffected by the pump excitation, and the inserted schematics show the components excited in the plexcitons
