Fig. 5: Performance of broadband PDs. | Light: Science & Applications

Fig. 5: Performance of broadband PDs.

From: A novel approach for designing efficient broadband photodetectors expanding from deep ultraviolet to near infrared

Fig. 5: Performance of broadband PDs.

a Charge generation and transport mechanism of a broadband PD. b Photocurrents of the ITO/ETL/CsPbI3/Ag (S1), ITO/ETL/CsPbI3:Er3+ (7.7%) PQDs/Ag (S2), ITO/ETL/CsPbI3:Er3+ (7.7%) PQDs/BHJ/Ag (S3) and Cr/Ce/Mn-LC/ITO/ETL/CsPbI3:Er3+ (7.7%) PQDs/BHJ/Ag (S4) devices under the 260 nm, 460 nm, and 860 nm, respectively. c D* of the S1–S4 devices and commercial Silicon PD. d EQE of the S1–S4 devices. e, f Stability of the S1–S4 devices under 30% RH and UV light radiation

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