Fig. 5: Schematic of the device structure and EL performance of the InP/ZnSexS1−x/ZnS (x = 0, 0.7, 1) QLEDs. | Light: Science & Applications

Fig. 5: Schematic of the device structure and EL performance of the InP/ZnSexS1−x/ZnS (x = 0, 0.7, 1) QLEDs.

From: Highly efficient green InP-based quantum dot light-emitting diodes regulated by inner alloyed shell component

Fig. 5

a Schematic of various layers in the device structure. b Energy band diagram of green-emitting InP/ZnSe0.7S0.3/ZnS QLEDs. c EL spectra. d Current density−voltage (J−V) characteristics. e Luminance−voltage (L−V) characteristics. f EQE as a function of luminance

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