Fig. 2: Electrical characteristic of Opto-Resistive RAM Switch.

a, b Current-voltage photoresponse characteristic of Opto-Resistive RAM Switch under a series of illumination from 0 to 353.7 pW·μm⁻² at the wavelength of (a) 520 nm and (b) 405 nm, respectively. The inset shows the zoom-in of the I–V curves before resistance switching happens. c, d Mean V_SET variation as a function of applied optical power at (c) 520 nm and (d) 405 nm, respectively. Note that the error bars are the standard error on the mean of 200 cycles. The black dash lines are fitted straight lines. e I–V characteristic of Opto-Resistive RAM Switch under 200 cycles without input optical signal. f I–V characteristic of Opto-Resistive RAM Switch under 200 cycles with 212.2 pW·μm⁻² optical power at 520 nm. g, h The statistics and distribution of high resistance state and low resistance state over 200 cycles (g) without light and (h) with 212.2 pW·μm⁻² optical power at 520 nm. i The I–V photoresponse characteristic of Opto-Resistive RAM Switch under 70.7 pW·μm⁻² illumination with different input wavelengths. (HRS High Resistance State, LRS Low Resistance State)