Fig. 4: Interlayer rotation angle dependence of Raman spectroscopy in WSe2 TBLs.
From: Phonon-assisted upconversion in twisted two-dimensional semiconductors
a The origin of B12g mode in the 2H-WSe2 bilayer. b The normalized spectrum of a WSe2 bilayer with Raman shifts in the range of 50 to 450 cm−1; the identifiable Raman modes are highlighted by Gaussian fitting, and the corresponding symmetry assignments are indicated. c The normalized spectra with Raman shifts in the range of 270 to 340 cm−1 for WSe2 TBLs with a series of interlayer rotation angles; the B12g modes are highlighted by Gaussian fitting; the red dotted line is the visual guide of the B12g Raman shifts evolution. d The twist-angle-dependent B12g Raman intensity plot
