Fig. 2: Memory behavior and photonic habituation in a NW device.
From: Nanograin network memory with reconfigurable percolation paths for synaptic interactions
a Schematic of the Si NW consisting of the solid core/porous shell and pure solid core segments. Two electrodes are placed on each segment. b SEM image of a fabricated NW device. Symbols of ▲ and ★ indicate the pure solid and core/shell segments, respectively. Scale bar, 2 μm. Lower inset, TEM image of the interface between the pure solid and core/shell segments (white dashed line). Scale bar, 200 nm. c Measured I–V curve for the NW device with a dual sweep mode. The black dotted arrows indicate the sweep direction. d Measured currents as a function of time, under the 658-nm laser illumination with powers of 17, 38, 60, 177, 334, 459, 523, 655, and 720 μW. The pump laser cycled between the on (orange region) and the off states for every 7 s. e Measured currents at 40 s in (d) as a function of the laser power
