Fig. 1: Structure and working principle of the silent-state-enhanced integrated circular polarization detector.
a Device structure of an integrated circular polarization detector dimer based on the metal-MoS2-metal architecture. b Band diagram of the two metal-MoS2 junctions functioning as two Schottky diodes connected face-to-face; and illustration of hot electron injection. c Poincare sphere with the longitude line crossing the S1 and the S3 axes. As χ varies from 0 to π, the polarization state changes along a longitude line on the Poincare sphere and accomplishes a complete tour. d Diagrams of two ordinary integrated circular polarization detectors: one is integrated with the left-handed Z-antenna array on the left contact and the other with the right-handed Z-antenna array on the right contact. e Light ellipticity-dependent photocurrents of the two detector monomers. The photocurrents are based on the simulated absorptances. f Diagrams of the detector dimer in the ultrahigh-CPER mode. g Light ellipticity-dependent photocurrents from the two junction regions (i1, i2) and light ellipticity-dependent net photocurrent (i = i1 − i2) of the detector dimer in the ultrahigh-CPER mode. h Comparison of the CPERs of ordinary integrated circular polarization detectors with that of an integrated circular polarization detector dimer in the ultrahigh-CPER mode. The Z-antenna/MoS2 results are based on our detector dimer in the ordinary mode and that in the ultrahigh-CPER mode (Plight = 281 μW, λ = 1.48 μm, f = 333 Hz, Δf = 1 Hz). The rest come from the literatures: spiral antenna/Si25, Z-antenna/Si26, π-antenna/MoSe227, π-antenna/graphene/Si15, Z-antenna/graphene28. i Diagram of the detector dimer in the balanced mode. j Light ellipticity-dependent photocurrent of the detector dimer in the balanced mode. k Contour of NEΔχ (χ, f) based on theoretical analysis
