Fig. 2: Optical and optoelectronic properties of the Z-antenna-integrated MoS₂.

a Microscopic photo picture of the integrated circular polarization detector dimer. The white dashed frame corresponds to the area for laser induced photocurrent mapping. The thickness of the MoS₂ measured by AFM is about 8 nm (Supplementary Note 11). b SEM image of the device. Inset: zoomed-in image of a single Z-antenna at the edge of the MoS₂ film. The dimensions of the Z-antenna: P_x = 780 nm and P_y = 550 nm represent the horizontal and vertical periods, w = 220 nm, d = 90 nm and L = 280 nm. c Measured and simulated absorptance spectra of the Z-antenna array under LCP and RCP illumination. d Light field (|E/E₀ | ²) distributions in the MoS₂ plane on top of the Z-antenna array under LCP and RCP illumination. The wavelength is 1.55 μm. E₀ denotes the amplitude of the incident light. e Laser induced photocurrent mapping results under LCP, VP, RCP, and HP illumination, respectively. P_light = 36 μW. f = 333 Hz. f Spectra of CPER₀, and spectra of responsivity induced by LCP and RCP light, respectively. g Ellipticity angle dependent responsivity polar diagrams at the wavelengths of 1.46 μm, 1.55 μm, and 1.7 μm, respectively